Nanoelectronics based on two-dimensional dichalcogenides

We are working on paving the way to electronic circuits based on two-dimensional transition metal semiconductors such as MoS2, newly emerging semiconducting analogues of graphene. TMDs can be rapidly exfoliated in the liquid phase into single layers starting from powders and provide solutions of 2D materials that can be coated over large areas. In a joint effort of wet and gas phase chemistry and deposition techniques, nanoanalytics, electronic and optical spectroscopy, electronic device fabrication and characterisation as well as theoretical modelling we aim to control the production and deposition of TMD nanolayers and nanoribbons, understand and control the interplay between morphology, defects and electrical properties, understand electrical transport through semiconducting nanolayers and fabricate nanodevices. By combining the ease of processing commonly associated with organic electronics with superior electrical properties, we will demonstrate a new type of low-power, low-cost field effect transistor based on a single TMD layer and/or nanoribbon.